Dense arrays of Ge nanoclusters induced by low-energy ion-beam assisted deposition on SiO2 filmsDVURECHENSKII, A. V; NOVIKOV, P. L; KHANG, Y et al.Proceedings of SPIE, the International Society for Optical Engineering. 2006, pp 626006.1-626006.8, issn 0277-786X, isbn 0-8194-6325-6, 1VolConference Paper

Stress-induced nanoislands nucleation during growth of Ge/Si heterostructures under low-energy ion irradiationSMAGINA, J. V; NOVIKOV, P. L; ARMBRISTER, V. A et al.Physica. B, Condensed matter. 2009, Vol 404, Num 23-24, pp 4712-4715, issn 0921-4526, 4 p.Conference Paper

Mechanisms of formation and topological analysis of porous silicon : computational modelingALEKSANDROV, L. N; NOVIKOV, P. L.Computational materials science. 1998, Vol 10, Num 1-4, pp 406-410, issn 0927-0256Conference Paper

Kinetics of phase transitions in porous materialsALEKSANDROV, L. N; NOVIKOV, P. L.Physica status solidi. A. Applied research. 1996, Vol 158, Num 2, pp 419-426, issn 0031-8965Article

Molecular-beam epitaxial growth of Ge/Si nanostructures under low-energy ion irradiationSMAGINA, Zh. V; NOVIKOV, P. L; ZINOVYEV, V. A et al.Journal of crystal growth. 2011, Vol 323, Num 1, pp 244-246, issn 0022-0248, 3 p.Conference Paper

Pulsed ion-beam assisted deposition of Ge nanocrystals on SiO2 for non-volatile memory deviceSTEPINA, N. P; DVURECHENSKII, A. V; ARMBRISTER, V. A et al.Thin solid films. 2008, Vol 517, Num 1, pp 313-316, issn 0040-6090, 4 p.Conference Paper

Ge/Si quantum dot nanostructures grown with low-energy ion beam-assisted epitaxyDVURECHENSKII, A. V; SMAGINA, J. V; GROETZSCHEL, R et al.Surface & coatings technology. 2005, Vol 196, Num 1-3, pp 25-29, issn 0257-8972, 5 p.Conference Paper

Specific behaviour of stress relaxation in GexSi1-x films grown on porous silicon based mesa substrates: computer calculationsNOVIKOV, P. L; BOLKHOVITYANOV, Yu B; PCHELYAKOV, O. P et al.Semiconductor science and technology. 2003, Vol 18, Num 1, pp 39-44, issn 0268-1242, 6 p.Article

Morphology of porous silicon structures formed by anodization of heavily and lightly doped siliconALEKSANDROV, L. N; NOVIKOV, P. L.Thin solid films. 1998, Vol 330, Num 2, pp 102-107, issn 0040-6090Article